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Analyse de la dégradation des paramètres du transistor VDMOS de puissance sous des conditions de stress thermique
Communication : JNRDM 2005, Paris. Analyse de la dégradation des paramètres du transistor VDMOS de puissance sous des conditions de stress thermique M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation...
2D analysis of Power VDMOS transistor CV characteristics temperature effects
Communication : “MOS-AK Meeting , April 2005, Strasbourg 2D analysis of Power VDMOS transistor CV characteristics temperature effects M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen...
Parameter degradation of a power VDMOS device under thermal stress conditions
Communication : EMRS spring meeting 2005, Strasbourg Parameter degradation of a power VDMOS device under thermal stress conditions M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen...
Gate Charge characteristics investigation of Negative Bias Temperature Instabilities in POWER MOSFET Reliability,
Communication : EMRS 2006, Nice Gate Charge characteristics investigation of Negative Bias Temperature Instabilities in POWER MOSFET Reliability M. Alwan B. Beydoun K. Ketata and M. Zoaeter Abstract: In spite of continuous scaling down of the dimensions...
