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Mise en évidence des problèmes de simulation des composants passis tout fibre et classification des outils du laboratoire basés sur le couplage de modes et du faisceau propagé
Résumé Ce travail est axé sur l'étude des composants passifs, par l'analyse modale et la résolution exacte des ces équations ainsi que la distribution transverse du champ électrique des modes guides. On a trouve le champ le mieux adapte a l'entrée d'un...
Dynamic Gate Charge Behaviors in n-
Communication and Exhibition : MS &T’07 Materials Science & Technology 2007 September 2007 COBO center Detriot, Michigan Fundamentals and Characterization Dynamic Gate Charge Behaviors in n- Channel Power VDMOSFETs during HEFS and PBTI Stresses M. Alwan...
Gate charge behaviors in N-channel power VDMOSFETs during
Publication Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses Microelectronics Reliability 47 (2007) 1406–1410 M. Alwan a,* , B. Beydoun b , K. Ketata c , M. Zoaeter b a LEMI, Rouen University, 76821 Mont Saint Aignan, France...
Bias Temperature Instability from Gate Charge characteristics investigations in N-Channel Power MOSFET
Publication Bias Temperature Instability from Gate Charge characteristics investigations in N-Channel Power MOSFET Microelectronics Journal 38 (2007) 727–734 M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation...
Bi-dimensional Investigation of Thermal Stress Effect on static VDMOS Characteristics
Publication Bi-dimensional Investigation of Thermal Stress Effect on static VDMOS Characteristics. Active and Passive Electronic Devices ( J. of Active and Passive Electronic Devices, Vol. 3, 2008 pp. 77–91) B. Beydoun*, M. Alwan, K. Ketata, M. Zoaeter*...
Two dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics
Article Two dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics Materials Science and Engineering: B, Volumes 124-125, 5 December 2005, Pages 335-340 M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire...
