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Analyse de la dégradation des paramètres du transistor VDMOS de puissance sous des conditions de stress thermique
Communication : JNRDM 2005, Paris. Analyse de la dégradation des paramètres du transistor VDMOS de puissance sous des conditions de stress thermique M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation...
2D analysis of Power VDMOS transistor CV characteristics temperature effects
Communication : “MOS-AK Meeting , April 2005, Strasbourg 2D analysis of Power VDMOS transistor CV characteristics temperature effects M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen...
Parameter degradation of a power VDMOS device under thermal stress conditions
Communication : EMRS spring meeting 2005, Strasbourg Parameter degradation of a power VDMOS device under thermal stress conditions M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen...
Gate Charge characteristics investigation of Negative Bias Temperature Instabilities in POWER MOSFET Reliability,
Communication : EMRS 2006, Nice Gate Charge characteristics investigation of Negative Bias Temperature Instabilities in POWER MOSFET Reliability M. Alwan B. Beydoun K. Ketata and M. Zoaeter Abstract: In spite of continuous scaling down of the dimensions...
Two dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics
Article Two dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics Materials Science and Engineering: B, Volumes 124-125, 5 December 2005, Pages 335-340 M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire...
