Dynamic Gate Charge Behaviors in n-
Communication and Exhibition : MS &T’07 Materials Science & Technology 2007 September 2007 COBO center Detriot, Michigan Fundamentals and Characterization Dynamic Gate Charge Behaviors in n- Channel Power VDMOSFETs during HEFS and PBTI Stresses M. Alwan...
Gate charge behaviors in N-channel power VDMOSFETs during
Publication Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses Microelectronics Reliability 47 (2007) 1406–1410 M. Alwan a,* , B. Beydoun b , K. Ketata c , M. Zoaeter b a LEMI, Rouen University, 76821 Mont Saint Aignan, France...
LEMI
LEMI est un Laboratoire Electronique Microtechnologie et Instrumentation. Au sein de notre environnement universitaire de recherche, peuvent se dégager des compétences spécifiques du laboratoire : Une expertise reconnue dans la technologie de la fusion...
Bias Temperature Instability from Gate Charge characteristics investigations in N-Channel Power MOSFET
Publication Bias Temperature Instability from Gate Charge characteristics investigations in N-Channel Power MOSFET Microelectronics Journal 38 (2007) 727–734 M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation...
Bi-dimensional Investigation of Thermal Stress Effect on static VDMOS Characteristics
Publication Bi-dimensional Investigation of Thermal Stress Effect on static VDMOS Characteristics. Active and Passive Electronic Devices ( J. of Active and Passive Electronic Devices, Vol. 3, 2008 pp. 77–91) B. Beydoun*, M. Alwan, K. Ketata, M. Zoaeter*...
CURRICULUM VITAE
BIOGRAPHY I hold a PhD degree in Micro electronics and Opto electronics from Rouen University - France. I am currently Head of department at the Lebanese University, Faculty of Tech nology. My research ac tivities revolve around micro electronic components,...
Analyse de la dégradation des paramètres du transistor VDMOS de puissance sous des conditions de stress thermique
Communication : JNRDM 2005, Paris. Analyse de la dégradation des paramètres du transistor VDMOS de puissance sous des conditions de stress thermique M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation...
2D analysis of Power VDMOS transistor CV characteristics temperature effects
Communication : “MOS-AK Meeting , April 2005, Strasbourg 2D analysis of Power VDMOS transistor CV characteristics temperature effects M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen...
Parameter degradation of a power VDMOS device under thermal stress conditions
Communication : EMRS spring meeting 2005, Strasbourg Parameter degradation of a power VDMOS device under thermal stress conditions M. Alwan, B. Beydoun*, K. Ketata, M. Zoaeter* Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen...
Gate Charge characteristics investigation of Negative Bias Temperature Instabilities in POWER MOSFET Reliability,
Communication : EMRS 2006, Nice Gate Charge characteristics investigation of Negative Bias Temperature Instabilities in POWER MOSFET Reliability M. Alwan B. Beydoun K. Ketata and M. Zoaeter Abstract: In spite of continuous scaling down of the dimensions...
/image%2F1390533%2F20211218%2Fob_91a15e_20211218-204256.jpg)