Dynamic Gate Charge Behaviors in n-

Communication and Exhibition :

MS&T’07  Materials Science & Technology 2007

September 2007 COBO center Detriot, Michigan

 Fundamentals and Characterization

 Dynamic Gate Charge Behaviors in n-Channel Power VDMOSFETs during HEFS and PBTI Stresses

 M. Alwan a, B. Beydoun b, K. Ketata c, M. Zoaeter b

 a LEMI, Rouen University, 76821 Mont Saint Aignan, France

 b LPM, Lebanese University , P.O. Box 11-4661, Beirut, 

 c GPM-UMR-CNRS 6634, Universite´ de Rouen, BP 12 76801, Saint Etienne du Rouvray Cedex, France