Two dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics

Article

Two dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics

Materials Science and Engineering: B, Volumes 124-125, 5 December 2005, Pages 335-340

M. Alwan, B. Beydoun^*, K. Ketata, M. Zoaeter^*

 Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), Rouen University,

 76821 Mont Saint Aignan, France.

  ^*Laboratoire de Physique des Matériaux (LPM), Lebanese university, P.O.Box : 11-4661 Beirut -Lebanon

       Keywords: VDMOS transistor, thermal stress, ionization coefficient, Breakdown voltage, C-V characterization.